GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors
| Autor: | Maria Tchernycheva, Xavier Lafosse, Jean-Christophe Harmand, Laurent Travers, Martina Morassi, Ludovic Largeau, O. Mauguin, Noelle Gogneau, Quang Chieu Bui, Christophe Dupuis, Nikoletta Jegenyes |
|---|---|
| Přispěvatelé: | Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Faculté polytechnique de Mons, Université de Mons (UMons), Laboratoire de Biotechnologie de l'Environnement [Narbonne] (LBE), Institut National de la Recherche Agronomique (INRA)-Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro), Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Paris Diderot - Paris 7 (UPD7)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Nanowire Shell (structure) Oxide Ga2O3 02 engineering and technology Epitaxy 01 natural sciences 7. Clean energy lcsh:Technology [SPI.MAT]Engineering Sciences [physics]/Materials GaN lcsh:Chemistry chemistry.chemical_compound Phase (matter) 0103 physical sciences General Materials Science Ga 2 O 3 Instrumentation lcsh:QH301-705.5 core/shell nanowires 010302 applied physics Fluid Flow and Transfer Processes Thermal oxidation business.industry lcsh:T Process Chemistry and Technology General Engineering 021001 nanoscience & nanotechnology lcsh:QC1-999 Computer Science Applications Active layer chemistry lcsh:Biology (General) lcsh:QD1-999 metal-oxide semiconductor lcsh:TA1-2040 gas sensor devices Optoelectronics 0210 nano-technology business lcsh:Engineering (General). Civil engineering (General) lcsh:Physics Molecular beam epitaxy |
| Zdroj: | Applied Sciences, Vol 9, Iss 17, p 3528 (2019) Applied Sciences Applied Sciences, MDPI, 2019, 9, pp.3528. ⟨10.3390/app9173528⟩ Volume 9 Issue 17 |
| ISSN: | 2076-3417 |
| DOI: | 10.3390/app9173528⟩ |
| Popis: | The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the &beta Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|