Direct visualization of polarization reversal of organic ferroelectric memory transistor by using charge modulated reflectance imaging
| Autor: | Dai Taguchi, Mitsumasa Iwamoto, Takaaki Manaka, Takako Otsuka |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Organic field-effect transistor business.industry General Physics and Astronomy Charge density 02 engineering and technology 021001 nanoscience & nanotechnology Electrostatics 01 natural sciences Ferroelectricity Pentacene Condensed Matter::Materials Science Hysteresis chemistry.chemical_compound Optics chemistry Electric field 0103 physical sciences Optoelectronics 0210 nano-technology business Polarization (electrochemistry) |
| Zdroj: | Journal of Applied Physics. 122(18):185501 |
| Popis: | By using the charge modulated reflectance (CMR) imaging technique, charge distribution in the pentacene organic field-effect transistor (OFET) with a ferroelectric gate insulator [P(VDF-TrFE)] was investigated in terms of polarization reversal of the P(VDF-TrFE) layer. We studied the polarization reversal process and the carrier spreading process in the OFET channel. The I-V measurement showed a hysteresis behavior caused by the spontaneous polarization of P(VDF-TrFE), but the hysteresis I-V curve changes depending on the applied drain bias, possibly due to the gradual shift of the polarization reversal position in the OFET channel. CMR imaging visualized the gradual shift of the polarization reversal position and showed that the electrostatic field formed by the polarization of P(VDF-TrFE) contributes to hole and electron injection into the pentacene layer and the carrier distribution is significantly dependent on the direction of the polarization. The polarization reversal position in the channel region... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|