High Temperature Quantum Kinetic Effect in Silicon Nanosandwiches
| Autor: | Nikolay T. Bagraev, V. Yu. Grigoryev, Leonid E. Klyachkin, Vladimir V. Romanov, V. A. Mashkov, Anna M. Malyarenko, N. I. Rul |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physics Physics and Astronomy (miscellaneous) Silicon Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Doping General Physics and Astronomy chemistry.chemical_element FOS: Physical sciences Fermion Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Magnetic field chemistry 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 010306 general physics Quantum Quantum well Boson |
| Popis: | The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300K, quantum Hall, 77K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface. 11 pages, 9 figures. arXiv admin note: substantial text overlap with arXiv:1601.05975, arXiv:1207.4928 |
| Databáze: | OpenAIRE |
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