alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire
| Autor: | Paul A. Midgley, John Jarman, Paul R. Chalker, F.C-P. Massabuau, Rachel A. Oliver, Duncan N. Johnstone, J.W. Roberts |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Scanning electron microscope Band gap Analytical chemistry Oxides 02 engineering and technology Substrate (electronics) Atomic layer epitaxy 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences X-ray diffraction Amorphous solid Inorganic Chemistry Atomic layer deposition Phase (matter) 0103 physical sciences Materials Chemistry Sapphire Semiconducting gallium compounds 0210 nano-technology Scanning electron diffraction QC |
| Zdroj: | JOURNAL OF CRYSTAL GROWTH |
| ISSN: | 0022-0248 |
| Popis: | α-Ga2O3 is a metastable phase of Ga2O3 of interest for wide bandgap engineering since it is isostructural with α-In2O3 and α-Al2O3. α-Ga2O3 is generally synthesised under high pressure (several GPa) or relatively high temperature (∼500 °C). In this study, we report the growth of α-Ga2O3 by low temperature atomic layer deposition (ALD) on sapphire substrate. The film was grown at a rate of 0.48 A/cycle, and predominantly consists of α-Ga2O3 in the form of ( 0001 ) -oriented columns originating from the interface with the substrate. Some inclusions were also present, typically at the tips of the α phase columns and most likely comprising e-Ga2O3. The remainder of the Ga2O3 film – i.e. nearer the surface and between the α-Ga2O3 columns, was amorphous. The film was found to be highly resistive, as is expected for undoped material. This study demonstrates that α-Ga2O3 films can be grown by low temperature ALD and suggests the possibility of a new range of ultraviolet optoelectronic and power devices grown by ALD. The study also shows that scanning electron diffraction is a powerful technique to identify the different polymorphs of Ga2O3 present in multiphase samples. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect