Comparative study about Al-doped zinc oxide thin films deposited by Pulsed Electron Deposition and Radio Frequency Magnetron Sputtering as Transparent Conductive Oxide for Cu(In,Ga)Se 2 -based solar cells
| Autor: | M. Bronzoni, S. Rampino, J.P. Garcia, F. Pattini, Filippo Annoni, F. Bissoli, Edmondo Gilioli |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Doping Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Sputtering law Electrical resistivity and conductivity Solar cell Materials Chemistry Transmittance Optoelectronics Transparent conducting oxides Aluminum-doped zinc oxide Pulsed electron deposition Solar cells Copper indium gallium diselenide Thin films Thin film business Layer (electronics) Transparent conducting film |
| Zdroj: | Thin solid films 582 (2015): 317–322. doi:10.1016/j.tsf.2014.11.071 info:cnr-pdr/source/autori:Pattini, F; Annoni, F; Bissoli, F; Bronzoni, M; Garcia, JP; Gilioli, E; Rampino, S/titolo:Comparative study about Al-doped Zinc Oxide thin films deposited by Pulsed Electron Deposition and Radio Frequency Magnetron Sputtering as Transparent Conductive Oxide for Cu (In, Ga) Se2-based solar cells/doi:10.1016%2Fj.tsf.2014.11.071/rivista:Thin solid films (Print)/anno:2015/pagina_da:317/pagina_a:322/intervallo_pagine:317–322/volume:582 |
| ISSN: | 0040-6090 |
| Popis: | In this study, a comparison between Al-doped ZnO (AZO) as Transparent Conductive Oxide for Cu(In,Ga)Se-2-based solar cells grown by Pulsed Electron Deposition (PED) and Radio Frequency Magnetron Sputtering (RFMS) was performed. PED yielded polycrystalline [002] mono-oriented thin films with low electrical resistivity and high optical transparency with heater temperatures ranging from room temperature (RT) to 250 degrees C. The electrical resistivity of these films can be tuned by varying the heater temperature, reaching a minimum value of 3.5 x 10(-4) Omega cm at 150 degrees C and an average transmittance over 90% in the visible range. An AZO film grown at RT was deposited by PED on an actual Cu(In,Ga)Se-2-based solar cell, resulting to an efficiency value of 15.2% on the best device. This result clearly shows that PED is a suitable technique for growing ZnO-based thin films for devices/applications where low deposition temperature is required. On the other hand, an optimized AZO thin film front contact for thin film solar cells was studied and fabricated via RFMS. The parameters of this technique were tweaked to obtain highly conductive and transparent AZO thin films. The lowest resistivity value of 3.7 x 10(-4) Omega cm and an average transmittance of 86% in the 400-1100 nm wavelength range was obtained with a heater temperature of 250 degrees C. A thick sputtered AZO film was deposited at RT onto an identical cell used for PED-grown AZO, reaching the highest conversion efficiency value of 14.7%. In both cases, neither antireflection coatings nor pure ZnO layer was used. (C) 2014 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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