| Autor: |
Xun Wang, Rong-fu Lin, Hong-chuan Wang |
| Rok vydání: |
1987 |
| Předmět: |
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| Zdroj: |
Physical Review B. 36:7712-7714 |
| ISSN: |
0163-1829 |
| DOI: |
10.1103/physrevb.36.7712 |
| Popis: |
The $c(4\ifmmode\times\else\texttimes\fi{}4)$ reconstruction of Si(100) clean surface has been obtained by suitable thermal annealing within the temperature range of 580-630\ifmmode^\circ\else\textdegree\fi{}C. The structure transition between $c(4\ifmmode\times\else\texttimes\fi{}4)$ and (2\ifmmode\times\else\texttimes\fi{}1) has been observed. From the experimental result of hydrogen adsorption that the $c(4\ifmmode\times\else\texttimes\fi{}4)$ structure could not convert into (2\ifmmode\times\else\texttimes\fi{}1) or (1\ifmmode\times\else\texttimes\fi{}1) after hydrogen exposure, the buckled dimer arrangement seems unlikely to form such $c(4\ifmmode\times\else\texttimes\fi{}4)$ periodicity. We propose that Pandey's $\ensuremath{\pi}$-bonded defect model with small modification might be a possible model of $c(4\ifmmode\times\else\texttimes\fi{}4)$ reconstruction in explaining all the observed evidences in our experiment. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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