| Autor: |
Francois Andrieu, A. Tiberj, B. Ghyselen, P. Leduc, J.M. Hartmann, Nicolas Daval, Y. Campidelli, Yves Morand, B. Blondeau, C. Lagahe-Blanchard, D. Bensahel, Vincent Paillard, J.-F. Lugand, Thomas Ernst, S. Pocas, Hubert Moriceau, Laetitia Vincent, O. Rayssac, Carlos Mazure, Cecile Aulnette, Alexandra Abbadie, Benedite Osternaud, A.-M. Cartier, Olivier Kermarrec, F. Fournel, N. Kernevez, I. Cayrefourq, Y. Bogumilowicz, M. Rivoire, C. Di Nardo, M.N. Séméria, Philippe Boucaud, Pascal Besson, Alain Claverie |
| Předmět: |
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| Zdroj: |
Scopus-Elsevier |
| Popis: |
Strained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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