Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage
| Autor: | Andrew M. Armstrong, Trevor Smith, Greg Pickrell, Mary H. Crawford, C. E. Glaser, Andrew A. Allerman |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
p-n junctions Gallium nitride 02 engineering and technology Chemical vapor deposition 01 natural sciences power semiconductor devices chemistry.chemical_compound Etching (microfabrication) 0103 physical sciences Breakdown voltage Electrical and Electronic Engineering Reactive-ion etching Diode Leakage (electronics) 010302 applied physics business.industry epitaxial growth 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials chemistry Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering Inductively coupled plasma 0210 nano-technology business lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 9, Pp 318-323 (2021) |
| ISSN: | 2168-6734 |
| DOI: | 10.1109/jeds.2021.3061028 |
| Popis: | Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 $\mu \text{A}$ /cm2 at 1250 V), excellent forward characteristics (ideality factor ~1.6), and low specific on-resistance (1.1 $\text{m}\Omega $ .cm2) were realized by mitigating plasma etch-related defects at the regrown interface. Epitaxial ${n}$ -GaN layers grown by metal-organic chemical vapor deposition on free-standing GaN substrates were etched using inductively coupled plasma etching (ICP), and we demonstrate that a slow reactive ion etch (RIE) prior to ${p}$ -GaN regrowth dramatically increases diode electrical performance compared to wet chemical surface treatments. Etched-and-regrown diodes without a junction termination extension (JTE) were characterized to compare diode performance using the post-ICP RIE method with prior studies of other post-ICP treatments. Then, etched-and-regrown diodes using the post-ICP RIE etch steps prior to regrowth were fabricated with a multi-step JTE to demonstrate kV-class operation. |
| Databáze: | OpenAIRE |
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