Optimization of Gas Composition Used in Plasma Chemical Vaporization Machining for Figuring of Reaction-Sintered Silicon Carbide with Low Surface Roughness
Autor: | Xu Yang, Kazuya Yamamura, Katsuyoshi Endo, Rongyan Sun, Yuji Ohkubo |
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Jazyk: | angličtina |
Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Figuring Multidisciplinary Materials science Machinability lcsh:R lcsh:Medicine 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Article chemistry.chemical_compound chemistry Machining 0103 physical sciences Vaporization Surface roughness Silicon carbide Wafer lcsh:Q Gas composition Composite material 0210 nano-technology lcsh:Science |
Zdroj: | Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018) Scientific Reports |
ISSN: | 2045-2322 |
DOI: | 10.1038/s41598-018-20849-5 |
Popis: | In recent years, reaction-sintered silicon carbide (RS-SiC) has been of interest in many engineering fields because of its excellent properties, such as its light weight, high rigidity, high heat conductance and low coefficient of thermal expansion. However, RS-SiC is difficult to machine owing to its high hardness and chemical inertness and because it contains multiple components. To overcome the problem of the poor machinability of RS-SiC in conventional machining, the application of atmospheric-pressure plasma chemical vaporization machining (AP-PCVM) to RS-SiC was proposed. As a highly efficient and damage-free figuring technique, AP-PCVM has been widely applied for the figuring of single-component materials, such as Si, SiC, quartz crystal wafers, and so forth. However, it has not been applied to RS-SiC since it is composed of multiple components. In this study, we investigated the AP-PCVM etching characteristics for RS-SiC by optimizing the gas composition. It was found that the different etching rates of the different components led to a large surface roughness. A smooth surface was obtained by applying the optimum gas composition, for which the etching rate of the Si component was equal to that of the SiC component. |
Databáze: | OpenAIRE |
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