Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate
| Autor: | Takashi Taniguchi, Yuichi Ochiai, Lijun Li, Gil-Ho Kim, Dongsuk Lim, Kenji Watanabe, Inyeal Lee, Nobuyuki Aoki, Moon-Shik Kang |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Bilayer Transistor Bioengineering Nanotechnology General Chemistry Substrate (electronics) Atmospheric temperature range law.invention chemistry.chemical_compound symbols.namesake chemistry Mechanics of Materials Boron nitride law symbols Optoelectronics General Materials Science Electrical measurements Electrical and Electronic Engineering business Raman spectroscopy Layer (electronics) |
| Zdroj: | Nanotechnology. 26(29) |
| ISSN: | 1361-6528 |
| Popis: | We have fabricated a bilayer molybdenum disulphide (MoS2) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm(-1) with the layer lying on BN, and a narrower line width in comparison with those on a SiO2 substrate. The device has a maximum drain current larger than 1 μA and a high current on/off ratio of greater than 10(8). In the temperature range of 100 K-293 K, the two terminal gate effect mobility and the carrier density do not change significantly with temperature. Results of the Raman and electrical measurements reveal that BN is a suitable substrate for atomic layer electrical devices. |
| Databáze: | OpenAIRE |
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