Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications

Autor:	Julius Tsai Ming Lin, Vincent Pott, Tony Tae-Hyoung Kim, Ramesh Vaddi
Přispěvatelé:	School of Electrical and Electronic Engineering, IEEE International Reliability Physics Symposium (2012 : Anaheim, California, US)
Jazyk:	angličtina
Rok vydání:	2012
Předmět:	Materials science Transistor Nanotechnology law.invention Non-volatile memory Operating temperature Memory cell law Logic gate MOSFET Nano Engineering::Electrical and electronic engineering [DRNTU] Hardware_INTEGRATEDCIRCUITS Array data structure
Popis:	This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This work further discusses the modeling of the NEM memory device and the scaling effects on the device performance. Finally, a memory cell consisting of the NEM memory device and two MOS transistors (1NEM-2T), and NEM NVM array structure are presented. Accepted version
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecfc09139b4eca39e9e1e0521c53f6ca http://hdl.handle.net/10220/16376 Zobrazit plný text záznamu