High Performance 400 °C p+/n Ge Junctions Using Cryogenic Boron Implantation
| Autor: | P. Swarnkar, Christopher Hatem, Firdous Basheer, Saurabh Lodha, Piyush Bhatt, Aneesh Nainani |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Germanium Contacts Mosfets Analytical chemistry Source/Drain Junction chemistry.chemical_element High activation Dopant Activation Epitaxy Electronic Optical and Magnetic Materials Contact Resistivity Ion implantation Cryogenic Implantation chemistry Electrical resistivity and conductivity Electronic engineering Germanium (Ge) Electrical and Electronic Engineering Boron Junction depth Model |
| Zdroj: | IEEE Electron Device Letters. 35:717-719 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2014.2326694 |
| Popis: | We report high performance Ge p(+)/n junctions using a single, cryogenic (-100 degrees C) boron ion implantation process. High activation >4 x 10(20) cm(-3) results in specific contact resistivity of 1.7 x 10(-8) Omega-cm(2) on p(+)-Ge, which is close to ITRS 15 nm specification (1 x 10(-8) Omega-cm(2)) and nearly 4.5x lower than the state of the art (8 x 10(-8) Omega-cm(2)). Cryogenic implantation is shown to enable solid-phase epitaxial regrowth and lower junction depth through amorphization of the surface Ge layer. These improvements in Ge p(+)/n junctions can pave the way for future high mobility Ge p-MOSFETs. |
| Databáze: | OpenAIRE |
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