Development of the ion source for cluster implantation

Autor:	B. Jonson, R. P. Kuibeda, Efim Oks, Vasily Gushenets, A. V. Kozlov, G. N. Kropachev, S. N. Dugin, Ady Hershcovitch, Timur Kulevoy, O. Alexeyenko, D. N. Seleznev, H. J. Poole
Rok vydání:	2014
Předmět:	Materials science Ion beam chemistry.chemical_element Particle accelerator Focused ion beam Engineering physics Ion source Ion law.invention Ion beam deposition Ion implantation chemistry Physics::Plasma Physics law Condensed Matter::Superconductivity Atomic physics Boron Instrumentation
Zdroj:	Review of Scientific Instruments. 85:02A501
ISSN:	1089-7623 0034-6748
Popis:	Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ece16e36774b2809c5e08d0a97daa9d4 https://doi.org/10.1063/1.4825075 Zobrazit plný text záznamu