Static and Dynamic Oxide-Trapped- Charge-Induced Variability in Nanoscale CMOS Circuits
| Autor: | Gennady I. Zebrev |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Oxide FOS: Physical sciences Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Instability Computer Science::Hardware Architecture chemistry.chemical_compound Quantum capacitance Computer Science::Emerging Technologies Reliability (semiconductor) Hardware_GENERAL Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Electronic circuit 010302 applied physics Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics business.industry Materials Science (cond-mat.mtrl-sci) Electronic Optical and Magnetic Materials Threshold voltage chemistry Logic gate Optoelectronics business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Electron Devices. 66:2483-2488 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and de-trapping. This approach has been benchmarked on the recent evidence of the radiation-induced increase of inter-transistor mismatch in 60 nm ICs. A possible reliability limitation in ultrascale circuits concerned with the single or a few charged defect instability is pointed out and estimated. 7 pages, 4 figures, revised printing errors |
| Databáze: | OpenAIRE |
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