X-ray diffraction study of thermal stress relaxation in ZnO films deposited by magnetron sputtering

Autor: Pierre-Olivier Renault, Jacques Jupille, S. Yu. Grachev, C. Krauss, Veronique Rondeau, E. Le Bourhis, P. Goudeau, Etienne Barthel, Nathalie Brun, Elin Sondergard, Rémi Lazzari, Florine Conchon, Rene Gy
Přispěvatelé: Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), Sciences et Ingénierie de la Matière Molle (SIMM), Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Surface du Verre et Interfaces (SVI), Université Pierre et Marie Curie - Paris 6 (UPMC)-Saint-Gobain-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS), Saint-Gobain Recherche (SGR), Saint-Gobain, Oxydes en basses dimensions (INSP-E9), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers, Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-SAINT-GOBAIN-Centre National de la Recherche Scientifique (CNRS), SAINT-GOBAIN, Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)
Jazyk: angličtina
Rok vydání: 2010
Předmět:
Materials science
Silicon
Residual stress
chemistry.chemical_element
Mineralogy
02 engineering and technology
Thermal treatment
Thermal relaxation
01 natural sciences
Stress (mechanics)
0103 physical sciences
Zinc oxide
Materials Chemistry
Stress relaxation
Thin film
Composite material
010302 applied physics
Metals and Alloys
Surfaces and Interfaces
Sputter deposition
021001 nanoscience & nanotechnology
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
X-ray diffraction
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism
chemistry
X-ray crystallography
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
[PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph]
0210 nano-technology
Magnetron sputtering
Zdroj: Thin Solid Films
Thin Solid Films, 2010, 519 (5), pp.1563-1567. ⟨10.1016/j.tsf.2010.07.013⟩
Thin Solid Films, Elsevier, 2010, 519 (5), pp.1563-1567. ⟨10.1016/j.tsf.2010.07.013⟩
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.07.013⟩
Popis: article i nfo Article history: X-ray diffraction stress analyses have been performed on two different thin films deposited onto silicon substrate: ZnO and ZnO encapsulated into Si3N4 layers. We showed that both as-deposited ZnO films are in a high compressive stress state. In situ X-ray diffraction measurements inside a furnace revealed a relaxation of the as-grown stresses at temperatures which vary with the atmosphere in the furnace and change with Si3N4 encapsulation. The observations show that Si3N4 films lying on both sides of the ZnO film play an important role in the mechanisms responsible for the stress relaxation during heat treatment. The different temperatures observed for relaxation in ambient and argon atmospheres suggest that the thermally activated stress relaxation may be attributed to a variation of the stoichiometry of the ZnO films. The present observations pave the way to fine tuning of the residual stresses through thermal treatment parameters. © 2010 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE
Externí odkaz: