High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate
| Autor: | Subramaniam Arulkumaran, K. Ranjan, S. Vicknesh, S. B. Dolmanan, Sukant K. Tripathy, C. M. Manoj Kumar, Geok Ing Ng |
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| Přispěvatelé: | Temasek Laboratories |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Engineering::Electrical and electronic engineering::Applications of electronics [DRNTU] business.industry Oscillation Transconductance Transistor Substrate (electronics) Noise figure Noise (electronics) Cutoff frequency Electronic Optical and Magnetic Materials law.invention law Optoelectronics Electrical and Electronic Engineering business Microwave |
| Popis: | We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In 0.17 Al 0.83 N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363 mS/mm, an unity current gain cutoff frequency (f T ) of 64 GHz and, a maximum oscillation frequency [fmax (U)/ f max (MSG)] of 72/106 GHz. The product f max (U) × L g =12.24 GHz· μm is the highest value ever reported for InAlN/GaN HEMTs on Si substrate. At V d =4 V and V g =-2.25 V, the device exhibited a minimum noise figure (NF min ) of 1.16 dB for 10 GHz and 1.76 dB for 18 GHz. Small variation of NF min ( |
| Databáze: | OpenAIRE |
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