Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions
| Autor: | Muhitdin Ahmetoglu Afrailov |
|---|---|
| Přispěvatelé: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Afrailov, Muhitdin Ahmetoğlu |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Spectral response Photon energy Condensed Matter::Materials Science Photoelectricity Photosensitivity Type II heterojunction with staggered band alignment Doping (additives) Mathematics::Representation Theory Photocurrent Isotype structures Physics applied business.industry Physics Instruments and Instrumentation Photodetectors Schottky diode Heterojunction Optics Gallium alloys Atmospheric temperature range Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Isotype Atomic and Molecular Physics and Optics Light emitting diodes Electronic Optical and Magnetic Materials Energy gap Electric potential Semiconductor Quantum Wells Indium Arsenide Photodiodes Dark current Heterojunctions Optoelectronics business Photo-response |
| Popis: | Dark current–voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current–voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90–300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias. |
| Databáze: | OpenAIRE |
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