Study of GaInP heterojunction solar cell interface properties by admittance spectroscopy
| Autor: | Gudovskikh, A.S., Kleider, Jean-Paul, Chouffot, Rémy, Kaluzhniy, N.A., Lantratov, V., Mintairov, S.A. |
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| Přispěvatelé: | Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Proceedings of 23rd European Photovoltaic Solar Energy Conference and Exhibition 23rd European Photovoltaic Solar Energy Conference and Exhibition 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.CD-ROM Proceedings |
| Popis: | 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 358-363 The capability of the admittance spectroscopy for the GaInP heterojunction interface properties study was demonstrated using both experimental and simulation results.The influence of the heterointerface band structure on admittance spectra was studied, and a crucial role of the band discontinuities (valence and conduction band offsets) was demonstrated. For example, it was shown that the activation energy of the capacitance step correlates with the values of band offset at the corresponding interfaces. The sensitivity of the admittance spectroscopy to the interface density of states was also demonstrated by the computer simulations. |
| Databáze: | OpenAIRE |
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