Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7

Autor: Wei Tian, Wenwen Zhou, Mani Pokharel, Yoshinori Okada, J. S. Helton, Chetan Dhital, Cyril Opeil, Tom Hogan, J. W. Lynn, Zhensong Ren, Stephen D. Wilson, Vidya Madhavan, M. Heine, Xiang Chen, Z. Yamani, Ziqiang Wang
Jazyk: angličtina
Rok vydání: 2013
Předmět:
crystal structure
roentgen spectroscopy
Materials science
Oxide
FOS: Physical sciences
General Physics and Astronomy
Nanotechnology
transition temperature
low temperature
General Biochemistry
Genetics and Molecular Biology
high temperature
chemistry.chemical_compound
Condensed Matter - Strongly Correlated Electrons
neutron diffraction
Phase (matter)
Coulomb criterion
Coulomb
Antiferromagnetism
strontium
Spin (physics)
ruthenium
Condensed Matter::Quantum Gases
Multidisciplinary
Strongly Correlated Electrons (cond-mat.str-el)
Condensed matter physics
nanotechnology
X ray powder diffraction
Mott insulator
electronics
Doping
neutron scattering
General Chemistry
iridium
chemistry
phase transition
correlation
mott phase
Condensed Matter::Strongly Correlated Electrons
phase separation
Ground state
Popis: Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.
25 pages, 4 figures in main text, 4 figures in supplemental text
Databáze: OpenAIRE
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