Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

Autor:	Yudai Yamaguchi, Yuya Kanitani, Yoshihiro Kudo, Jun Uzuhashi, Tadakatsu Ohkubo, Kazuhiro Hono, Shigetaka Tomiya
Rok vydání:	2022
Předmět:	Mechanical Engineering General Materials Science Bioengineering General Chemistry Condensed Matter Physics
Zdroj:	Nano Letters. 22:6930-6935
ISSN:	1530-6992 1530-6984
Popis:	The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebbadbd9be68856a9802753d05cd7193 https://doi.org/10.1021/acs.nanolett.2c01479 Zobrazit plný text záznamu