Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC
| Autor: | Wook Bahng, Sang-Mo Koo, Jeong Hyun Moon, Woo-Young Son |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Deep-level transient spectroscopy Annealing (metallurgy) Biomedical Engineering Analytical chemistry chemistry.chemical_element Bioengineering General Chemistry Nitride Condensed Matter Physics Acceptor chemistry Aluminium Vacancy defect General Materials Science Layer (electronics) Surface states |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 21:1904-1908 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2021.18906 |
| Popis: | We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10−16 cm−2 and the trap concentration was reduced by approximately 40 times. |
| Databáze: | OpenAIRE |
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