SIMS without sums

Autor:	D. E. Sykes, Alison Chew
Rok vydání:	1997
Předmět:	Secondary ion mass spectrometry Materials science Resolution (mass spectrometry) Semiconductor materials Analytical technique Electrical and Electronic Engineering Engineering physics Characterization (materials science)
Zdroj:	III-Vs Review. 10:41-44
ISSN:	0961-1290
DOI:	10.1016/s0961-1290(97)86175-3
Popis:	Secondary Ion Mass Spectrometry (SIMS) is probably the most powerful analytical technique for the characterization of semiconductor materials. Its strength lies in its ability to perform high sensitivity chemical analysis directly on semiconductor materials with high spatial and depth resolution. As part of the continuing series on assessment techniques, III–Vs Review presents a mathematics-free overview of the process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb8dd38c183d8e398ef460cf2b2fab7a https://doi.org/10.1016/s0961-1290(97)86175-3 Zobrazit plný text záznamu