The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations

Autor:	Chris R. Kleijn, A.P. Grzegorczyk, C.E.C. Dam, P.K. Larsen, P.R. Hageman, R. Dorsman
Rok vydání:	2004
Předmět:	Inorganic Chemistry Crystallography geography Applied Materials Science geography.geographical_feature_category Chemistry Hydride vapour phase epitaxy Materials Chemistry Thermodynamics Growth rate Reactor geometry Condensed Matter Physics Inlet
Zdroj:	Journal of Crystal Growth, 271, 192-199 Journal of Crystal Growth, 271, 1-2, pp. 192-199
ISSN:	0022-0248
Popis:	In the study, presented in this paper, the growth of GaN layers by Hydride vapour phase epitaxy was investigated both experimentally and numerically. Modelling the flows in the reactor, combined with basic chemistry, gives a good approximation to the actual growth experiments. It was found that small changes in the reactor geometry, e.g. the inlet of GaCl, have a large effect on the growth rate as well as on the uniformity of the growth. (C) 2004 Elsevier B.V. All rights reserved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb51b0d732bd1d07e982f61363bb6fdc http://hdl.handle.net/2066/112597 Zobrazit plný text záznamu Full Text from ScienceDirect