Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
Autor: | Grzegorz Muziol, G. Staszczak, Szymon Grzanka, Katarzyna Pieniak, Ewa Grzanka, Anna Kafar, Czeslaw Skierbiszewski, Witold Trzeciakowski, Tadeusz Suski, Mikolaj Chlipala, Henryk Turski, Irina Makarowa |
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Rok vydání: | 2021 |
Předmět: |
Materials science
Field (physics) business.industry Quantum-confined Stark effect 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics law.invention 010309 optics symbols.namesake Optics Stark effect law Tunnel junction Electric field 0103 physical sciences symbols Optoelectronics 0210 nano-technology business Quantum well Diode Light-emitting diode |
Zdroj: | Optics express. 29(2) |
ISSN: | 1094-4087 |
Popis: | Nitride-based light-emitting diodes (LEDs) are well known to suffer from a high built-in electric field in the quantum wells (QWs). In this paper we determined to what extent the electric field is screened by injected current. In our approach we used high pressure to study this evolution. In LEDs with a narrow QW (2.6 nm) we found that even at a high injection current a large portion of built-in field remains. In LEDs with very wide QWs (15 and 25 nm) the electric field is fully screened even at the lowest currents. Furthermore, we examined LEDs with a tunnel junction in two locations – above and below the active region. This allowed us to study the cases of parallel and antiparallel fields in the well and in the barriers. |
Databáze: | OpenAIRE |
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