Spin-orbit interaction induced in graphene by transition metal dichalcogenides
| Autor: | Alan T. Johnson, S. Guéron, Taro Wakamura, Cecilia Mattevi, Meng-Qiang Zhao, Abdelkarim Ouerghi, Hélène Bouchiat, Pawel Palczynski, Francesco Reale |
|---|---|
| Přispěvatelé: | Laboratoire de Physique des Solides (LPS), Université Paris Sud Orsay, Imperial College London, Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Engineering & Physical Science Research Council (EPSRC), The Royal Society |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Fluids & Plasmas FOS: Physical sciences Physics::Optics 02 engineering and technology Type (model theory) 01 natural sciences law.invention Transition metal law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Monolayer [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 010306 general physics Spin relaxation ComputingMilieux_MISCELLANEOUS [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall] 02 Physical Sciences Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Graphene Scattering Spin–orbit interaction 021001 nanoscience & nanotechnology 3. Good health 03 Chemical Sciences 0210 nano-technology |
| Zdroj: | Physical Review B: Condensed Matter and Materials Physics (1998-2015) Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2019, 99 (245402), ⟨10.1103/PhysRevB.99.245402⟩ |
| ISSN: | 2469-9969 2469-9950 1098-0121 1550-235X |
| DOI: | 10.1103/physrevb.99.245402 |
| Popis: | We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $\sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene. 14 pages, 10 figures and 3 tables |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|