NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector
| Autor: | Jin Hyuk Oh, Gyungock Kim, Ki-Seok Jang, Sun Ae Kim, Sanghoon Kim |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Optical alignment business.industry Bandwidth (signal processing) Photodetector 02 engineering and technology 021001 nanoscience & nanotechnology Avalanche photodiode 01 natural sciences Atomic and Molecular Physics and Optics Avalanche breakdown 010309 optics Optics Amplitude 0103 physical sciences 0210 nano-technology business Voltage Free-space optical communication |
| Zdroj: | Optics Letters. 43:5583 |
| ISSN: | 1539-4794 0146-9592 |
| Popis: | We present the enhanced performances of a vertical-illumination-type Ge-on-Si avalanche photodetector based on internal RF-gain effects operating up to 50 Gb/s. A fabricated Ge-on-Si avalanche photodetector (APD) exhibits three operational voltage regions associated with different aspects of the current (DC) gain and bandwidth characteristics. The measured current-voltage (I-V) curve of a Ge-on-Si APD exhibits a negative photoconductance (negative differential resistance [NDR]) in a high bias region beyond the avalanche breakdown voltage (V br ), where a device shows good eye openings up to 50 Gb/s (non-return-to-zero [NRZ] signal) with further improved signal-to-noise ratios and signal amplitudes. A ROSA packaged module, wherein a fabricated Ge-on-Si APD is wire-bonded to a commercial TIA with a ∼75% optical alignment for λ∼1310 nm and biased at a lower voltage than the V br , exhibits the sensitivities of −18.9 and −15.3 dBm for 30 and 35 Gb/s, respectively, and −13.9 dBm for 40 Gb/s at a 10−12 bit error rate. The experimental results indicate that considerable improvement in a module performance can be expected by utilizing the Ge-on-Si APD operated in the NDR region with a properly customized TIA. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|