Addressable electron spin resonance using donors and donor molecules in silicon
| Autor: | Rajib Rahman, Lukas Fricke, Chin-Yi Chen, Michelle Y. Simmons, Yu Wang, JG Joris Keizer, S. J. Hile, Matthew House, Matthew A. Broome, S. K. Gorman, Eldad Peretz |
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| Rok vydání: | 2018 |
| Předmět: |
Silicon
FOS: Physical sciences chemistry.chemical_element 02 engineering and technology 01 natural sciences Molecular physics law.invention Computer Science::Emerging Technologies Impurity law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Molecule Physics::Atomic Physics Hardware_ARITHMETICANDLOGICSTRUCTURES 010306 general physics Electron paramagnetic resonance Lithography Hyperfine structure Research Articles Quantum computer Physics Quantum Physics Multidisciplinary Condensed Matter - Mesoscale and Nanoscale Physics QC0170 SciAdv r-articles Condensed Matter Physics 021001 nanoscience & nanotechnology chemistry Qubit Quantum Physics (quant-ph) 0210 nano-technology Research Article |
| Zdroj: | Science Advances |
| ISSN: | 2375-2548 |
| Popis: | Built-in hyperfine couplings of donor qubits engineered by precision placement promote addressable electron spin resonance. Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donors with separations ~15 nm is challenging. We show that by using atomic precision lithography, we can place a single P donor next to a 2P molecule 16 ± 1 nm apart and use their distinctive hyperfine coupling strengths to address qubits at vastly different resonance frequencies. In particular, the single donor yields two hyperfine peaks separated by 97 ± 2.5 MHz, in contrast to the donor molecule that exhibits three peaks separated by 262 ± 10 MHz. Atomistic tight-binding simulations confirm the large hyperfine interaction strength in the 2P molecule with an interdonor separation of ~0.7 nm, consistent with lithographic scanning tunneling microscopy images of the 2P site during device fabrication. We discuss the viability of using donor molecules for built-in addressability of electron spin qubits in silicon. |
| Databáze: | OpenAIRE |
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