Study of Phase Transition in MOCVD Grown Ga2O3 from κ to β Phase by Ex Situ and In Situ Annealing
| Autor: | Honghyuk Kim, Vinayak P. Dravid, Manijeh Razeghi, Kun He, J. J. Lee, Xiaobing Hu, Lakshay Gautam |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
thermal annealing
lcsh:Applied optics. Photonics Phase transition Materials science Annealing (metallurgy) Analytical chemistry Ga2O3 02 engineering and technology Chemical vapor deposition Epitaxy 01 natural sciences 0103 physical sciences Scanning transmission electron microscopy Radiology Nuclear Medicine and imaging Metalorganic vapour phase epitaxy Thin film Instrumentation 010302 applied physics lcsh:TA1501-1820 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics thin films phase transition MOCVD Sapphire 0210 nano-technology |
| Zdroj: | Photonics, Vol 8, Iss 17, p 17 (2021) Photonics Volume 8 Issue 1 |
| ISSN: | 2304-6732 |
| Popis: | We report the post-growth thermal annealing and the subsequent phase transition of Ga2O3 grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher than 900 ° C under N2 ambience, by either in situ or ex situ thermal annealing, can induce phase transition from nominally metastable &kappa to thermodynamically stable &beta phase. This was analyzed by structural characterizations such as high-resolution scanning transmission electron microscopy and x-ray diffraction. The highly resistive as-grown Ga2O3 epitaxial layer becomes conductive after annealing at 1000 ° C. Furthermore, we demonstrate that in situ annealing can lead to a crack-free &beta Ga2O3. |
| Databáze: | OpenAIRE |
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