Effect of AlN Seed Layer on Crystallographic Characterization of Piezoelectric AlN
| Autor: | Paul Muralt, Waqas Bashir, Luis Guillermo Villanueva, Annalisa De Pastina, Kaitlin Howell, Ramin Matloub |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) Nitride 01 natural sciences stress 0103 physical sciences Texture (crystalline) Thin film nitride thin-films 010302 applied physics Wide-bandgap semiconductor Surfaces and Interfaces Physics - Applied Physics 021001 nanoscience & nanotechnology Condensed Matter Physics Piezoelectricity electrodes Surfaces Coatings and Films Full width at half maximum Crystallography X-ray crystallography systems resonator 0210 nano-technology Layer (electronics) |
| Popis: | Ultrathin aluminum nitride (AlN) films are of great interest for integration into nanoelectromechanical systems for actuation and sensing. Given the direct relationship between crystallographic texture and piezoelectric response, x-ray diffraction has become an important metrology step. However, signals from layers deposited below the piezoelectric (PZE) AlN thin film may skew the crystallographic analysis and give misleading results. In this work, we compare the use of a Ti or AlN seed layer on the crystallographic quality of PZE AlN. We also analyze the influence of several AlN seed layer thicknesses on the rocking curve FWHM of PZE AlN and demonstrate an larger effect of the AlN seed layer on the {\theta}-2{\theta} AlN crystallographic peak for increasing AlN seed layer thickness. Comment: 16 pages, 4 figures, 1 table |
| Databáze: | OpenAIRE |
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