Role of Trimethylaluminum in Low Temperature Atomic Layer Deposition of Silicon Nitride
| Autor: | Anupama Mallikarjunan, Aaron Dangerfield, Ronald Martin Pearlstein, Xinjian Lei, Charith E. Nanayakkara, Jérémy Cure, Agnes Derecskei-Kovacs, Alain Estève, Yves J. Chabal |
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| Přispěvatelé: | University of Texas at Dallas [Richardson] (UT Dallas), Équipe Nano-ingénierie et intégration des oxydes métalliques et de leurs interfaces (LAAS-NEO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
inorganic chemicals
Materials science Silicon General Chemical Engineering Inorganic chemistry Hydrazine Oxide chemistry.chemical_element 02 engineering and technology Nitride 010402 general chemistry 01 natural sciences complex mixtures chemistry.chemical_compound Atomic layer deposition Materials Chemistry technology industry and agriculture General Chemistry [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Nitrogen 0104 chemical sciences chemistry Silicon nitride 0210 nano-technology Deposition (chemistry) |
| Zdroj: | Chemistry of Materials Chemistry of Materials, American Chemical Society, 2017, 29 (14), pp.6022-6029. ⟨10.1021/acs.chemmater.7b01816⟩ Chemistry of Materials, 2017, 29 (14), pp.6022-6029. ⟨10.1021/acs.chemmater.7b01816⟩ |
| ISSN: | 0897-4756 1520-5002 |
| Popis: | International audience; Aminosilanes are attractive precursors for atomic layer deposition of silicon oxides and nitrides because they are halide-free and more reactive than chlorosilanes. However, the deposition of silicon nitride on oxide substrates still requires relatively high temperatures. We show here that for a process involving disec-butylaminosilane and hydrazine, the insertion of Al from trimethyl aluminum allows the deposition of silicon nitride films at relatively low temperatures (250 °C). First-principles calculations reveal that the presence of Al increases the binding of molecular hydrazine, thereby effectively enhancing the reactivity of hydrazine with the silicon precursor during the atomic layer deposition process, which leads to nitrogen incorporation into silicon. However, the range of this enhancement is limited to ∼1 nm, requiring additional trimethylaluminum exposures to continue the Si 3 N 4 deposition. |
| Databáze: | OpenAIRE |
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