Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions
| Autor: | Barniol i Beumala, Núria, Pérez Murano, Francesc, Aymerich Humet, Xavier, American Physical Society |
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| Rok vydání: | 2021 |
| Předmět: |
Silicon
Physics and Astronomy (miscellaneous) Chemistry Tunneling Resolution (electron density) Analytical chemistry chemistry.chemical_element Scanning tunneling microscopes Isotropic etching law.invention Surface oxidation chemistry.chemical_compound Hydrofluoric acid Nonlinear acoustics Etching Impurity law Etching (microfabrication) Surface treatments Scanning tunneling microscope Spectroscopy Scanning tunneling microscopy Water vapor |
| Zdroj: | Recercat. Dipósit de la Recerca de Catalunya instname Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona Recercat: Dipósit de la Recerca de Catalunya Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Popis: | The modification of HF-etched silicon (100) surface with a scanning tunneling microscope(STM) operated in air is studied for the first time in samples subjected to the standard HF etching without the follow-up rinsing in H2O. The modifications are produced in air under normal STM imaging conditions (V t =−1.4 V and I t =2 nA). The simultaneous acquisition of topographical, current image tunneling spectroscopy and local barrier-height images clearly shows that the nature of the modification is not only topographical but also chemical. The features produced with a resolution better than 25 nm are attributed to a tip-induced oxidation enhanced by the presence of fluorine on the surface. |
| Databáze: | OpenAIRE |
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