Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

Autor:	Tomáš Světlík, Marek Bouška, Libor Dostál, Petr Němec, Aleš Růžička, Ludvík Beneš, Květoslav Růžička, Roman Jambor, Tomáš Řičica
Rok vydání:	2016
Předmět:	Chemistry Organic Chemistry Inorganic chemistry chemistry.chemical_element 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Catalysis 0104 chemical sciences Amorphous solid Crystallography Gallium Thin film 0210 nano-technology
Zdroj:	Chemistry - A European Journal. 22:18817-18823
ISSN:	0947-6539
Popis:	Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L1 Ga(μ-S)]3 (1) and [L2 Ga(μ-S)]2 (2) containing either N,C,N- or C,N-chelating ligands L1 or L2 (L1 is {2,6-(Me2 NCH2 )2 C6 H3 }- and L2 is {2-(Et2 NCH2 )-4,6-tBu2 -C6 H2 }- ). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L1 Ga(κ2 -S4 ) (3) was prepared and the unprecedented complex [{2-[CH{(CH2 )3 CH3 }(μ-OH)]-6-CH2 NMe2 }C6 H3 ]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaa9696559fafca0cab4e9b1cb619c7f https://doi.org/10.1002/chem.201604190 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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