Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs
| Autor: | G. Weimann, K.H. Schmidt, M. Chertouk, W. Marsetz, Klaus Köhler, W. Jantz, Michael Dammann |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2000 |
| Předmět: |
Materials science
drain voltage Kanaltemperatur Aktivierungsenergie Drainspannung Drain-induced barrier lowering Reliability (semiconductor) Electrical and Electronic Engineering Diffusion (business) Safety Risk Reliability and Quality reliability business.industry fluorine diffusion Fluor Diffusion Electrical engineering feldbeschleunigte Diffusion Zuverlässigkeit Condensed Matter Physics channel temperature field accelerated diffusion Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Low noise activation energy Degradation (geology) Optoelectronics InP-based HEMT Arrhenius plot business Voltage Communication channel |
| Popis: | By performing biased accelerated life tests and three dimensional temperature simulations the effect of drain voltage on reliability and channel temperature of pseudomorphic InAlAs/InGaAs HEMTs for low noise applications was investigated. At V d =1 V excellent long term stability in nitrogen ambient was observed. Increasing the drain voltage to V d =2 V at constant channel temperature leads to a faster degradation rate which is caused by field accelerated degradation mechanism, probably involving fluorine diffusion. The influence of gate width on channel temperature and reliability was found to be small. |
| Databáze: | OpenAIRE |
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