| Autor: |
Katarzyna Skorupska, Thomas Stempel, Michael Lublow, Michael Kanis, H. J. Lewerenz, A.G. Muñoz |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
ECS Meeting Abstracts. :918-918 |
| ISSN: |
2151-2043 |
| DOI: |
10.1149/ma2009-01/22/918 |
| Popis: |
The formation of step bunching was observed by atomic force microscopy on n-type Si(111) surfaces during the electrodeposition of noble metals under semiconductor depletion conditions. The surface chemical analysis performed by synchrotron radiation photoelectron spectroscopy (SRPES) indicates the formation of an ultra-thin oxide film along with the topological transformation. Step bunching is interpreted in terms of site-specific etching controlled by the reactivity of kink sites and step edges together with the surface accumulation of holes supplied by the reduction of Pt-chloride complexes via the valence band. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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