Point defects induced work function modulation of β-Ga2O3
| Autor: | Bhera Ram Tak, Ashok K. Kapoor, R.K. Singh, Vinay Gupta, Anshu Goyal, Sheetal Dewan, Ravi Pathak, S. Nagarajan |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
General Physics and Astronomy chemistry.chemical_element GaO 02 engineering and technology 010402 general chemistry 01 natural sciences Work function Pulsed laser deposition symbols.namesake Vacancy defect Point defects Valence band spectra Raman phonon modes Thin film Gallium ta216 Kelvin probe force microscope Condensed matter physics Fermi level Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Crystallographic defect 0104 chemical sciences Surfaces Coatings and Films chemistry symbols 0210 nano-technology |
| Zdroj: | APPLIED SURFACE SCIENCE. 465:973-978 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2018.09.236 |
| Popis: | Effect of point defects such as vacancies and interstitials on the work function of β-Ga2O3 thin films grown by pulsed laser deposition was investigated. Relative change in Ag3 and Ag6 Raman phonon modes indicated formation of oxygen and gallium vacancy defects. The surface potential mapping of Ga2O3 thin films was performed by Kelvin probe force microscopy. Analytical calculations showed variation in work function with oxygen pressure. The work function values at extreme growth pressure conditions were found to be very high. Hence, Fermi level was pinned at the mid-gap energy in both oxygen-deficient condition and oxygen-rich conditions which is attributed to oxygen and gallium vacancy defects. This mechanism of controlling Fermi level pinning in β-Ga2O3 paves the way to fabricate high performance electronic devices. |
| Databáze: | OpenAIRE |
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