Growth of large-scale nanotwinned Cu nanowire arrays from anodic aluminum oxide membrane by electrochemical deposition process: controllable nanotwin density and growth orientation with enhanced electrical endurance performance

Autor:	Tsung-Cheng Chan, Zhiming Wang, Hung-Wei Tsai, Yen-Miao Lin, Yu-Lun Chueh, Chien-Neng Liao
Rok vydání:	2014
Předmět:	Coalescence (physics) Materials science Relaxation (NMR) Nanowire Stacking General Materials Science Nanotechnology Composite material Crystal twinning Electrochemistry Electromigration Deposition (law)
Zdroj:	Nanoscale. 6:7332-7338
ISSN:	2040-3372 2040-3364
DOI:	10.1039/c3nr06194a
Popis:	Densely nanotwinned Cu nanowire (NW) arrays with an identical diameter of ∼55 nm were fabricated by pulse electrochemical deposition at low temperature using anodic aluminum oxide as a template. Different growth orientations of nanotwinned Cu nanowire arrays were investigated. The endurance of the electrical current density before breakdown of the nanotwinned Cu NWs can reach up to 2.4 × 10(8) A cm(-2). The formation of highly dense nanotwins is attributed to relaxation of coalescence induced stress and twin fault stacking when Cu NWs grow by two-dimensional kinetics. A mechanism based on the twinning structure effect on the electromigration was proposed to explain the improved electrical endurance of Cu. The result demonstrates that the formation of nanotwins into Cu NWs can effectively suppress the void growth, leading to extended life time for use in electronic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea0b6a914d1bd57ced6f31f6e841a80f https://doi.org/10.1039/c3nr06194a Zobrazit plný text záznamu