High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport
| Autor: | Tai-Lung Wu, Aymeric Tuaz, Michael A. Capano, Candice Thomas, Michael J. Manfra, Tiantian Wang, Rosa E. Diaz, Ray Kallaher, Anthony Hatke, Geoffrey C. Gardner |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Electron mobility
Materials science Physics and Astronomy (miscellaneous) FOS: Physical sciences 02 engineering and technology Substrate (electronics) 01 natural sciences Condensed Matter::Materials Science Ballistic conduction 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science 010306 general physics Quantum well Mesoscopic physics Quantum Physics Condensed Matter - Mesoscale and Nanoscale Physics business.industry Heterojunction 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Optoelectronics 0210 nano-technology business Fermi gas Quantum Physics (quant-ph) Molecular beam epitaxy |
| Popis: | High mobility, strong spin-orbit coupling, and large Land\'e g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments. Successful operation of mesoscopic devices relies on three key properties: electrical isolation from the substrate; ability to fully deplete the 2DEG and control residual sidewall conduction with lithographic gates; and high mobility to ensure ballistic transport over mesoscopic length scales. Simultaneous demonstration of these properties has remained elusive for InAs 2DEGs on GaSb substrates. Here we report on heterostructure design, molecular beam epitaxy growth, and device fabrication that result in high carrier mobility and full 2DEG depletion with minimal residual edge conduction. Our results provide a pathway to fully-controlled 2DEG-based InAs mesoscopic devices. Comment: 5 figures |
| Databáze: | OpenAIRE |
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