Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
| Autor: | Ali Jaffal, Philippe Regreny, Nicolas Chauvin, Gilles Patriarche, Michel Gendry |
|---|---|
| Přispěvatelé: | INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Spectroscopies et Nanomatériaux (INL - S&N), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2021 |
| Předmět: |
Photoluminescence
Photon Materials science Nanowire FOS: Physical sciences Photodetector Physics::Optics Geometry Applied Physics (physics.app-ph) 02 engineering and technology 01 natural sciences Condensed Matter::Materials Science 0103 physical sciences General Materials Science [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010306 general physics Condensed Matter - Materials Science Linear polarization Materials Science (cond-mat.mtrl-sci) Physics - Applied Physics 021001 nanoscience & nanotechnology Polarization (waves) Quantum dot [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] 0210 nano-technology Molecular beam epitaxy |
| Zdroj: | Nanoscale Nanoscale, Royal Society of Chemistry, 2021, 13, pp.16952-16958. ⟨10.1039/D1NR04263G⟩ |
| ISSN: | 2040-3372 2040-3364 |
| DOI: | 10.1039/D1NR04263G⟩ |
| Popis: | Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors. 20 pages, 7 figures |
| Databáze: | OpenAIRE |
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