Random spin-orbit gates in the system of a topological insulator and a quantum dot

Autor: S. Wolski, M. Inglot, C. Jasiukiewicz, K. A. Kouzakov, T. Masłowski, T. Szczepański, S. Stagraczyński, R. Stagraczyński, V. K. Dugaev, L. Chotorlishvili
Rok vydání: 2022
Předmět:
Zdroj: Physical Review B. 106
ISSN: 2469-9969
2469-9950
DOI: 10.1103/physrevb.106.224418
Popis: The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged R\'enyi entropy. We found that applied external magnetic field leads to long-range entanglement on the distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of a strong disorder.
Comment: 12 pages, 8 figures
Databáze: OpenAIRE
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