Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor
| Autor: | Masato Ishikawa, Atsushi Ogura, Hideaki Machida, Naomi Sawamoto, Sudo Hiroshi, H. Wakabayashi, Seiya Ishihara, Takumi Ohashi, Kentarou Matsuura, Yusuke Hibino |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Hybrid physical-chemical vapor deposition Annealing (metallurgy) Mechanical Engineering Ion plating 02 engineering and technology Chemical vapor deposition Combustion chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Chemical engineering Mechanics of Materials 0103 physical sciences General Materials Science Thin film 0210 nano-technology Molybdenum disulfide |
| Zdroj: | MRS Advances. 2(No. 29) |
| Popis: | Molybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|