Sequential control of step-bunching during graphene growth on SiC (0001)
| Autor: | Michiko Kusunoki, Keita Matsuda, Jianfeng Bao, Wataru Norimatsu, Osamu Yasui |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Graphene business.industry Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Sequential control Slow heating law Sic substrate Power electronics 0103 physical sciences Physics::Atomic and Molecular Clusters Optoelectronics Physics::Accelerator Physics Physics::Chemical Physics 010306 general physics 0210 nano-technology business |
| Zdroj: | APPLIED PHYSICS LETTERS. 109:081602-081602 |
| ISSN: | 0003-6951 |
| Popis: | We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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