Core–shell SiC/SiO2 whisker reinforced polymer composite with high dielectric permittivity and low dielectric loss
| Autor: | Zhenchong Zhang, Yizhuo Gu, Shaokai Wang, Zuoguang Zhang, Jiayu Bi, Min Li |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
chemistry.chemical_classification
Materials science Mechanical Engineering Composite number Relative permittivity 02 engineering and technology Dielectric Polymer Conductivity 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Mechanics of Materials Whisker Silicon carbide lcsh:TA401-492 General Materials Science Dielectric loss lcsh:Materials of engineering and construction. Mechanics of materials Composite material 0210 nano-technology |
| Zdroj: | Materials & Design, Vol 89, Iss, Pp 933-940 (2016) |
| ISSN: | 0264-1275 |
| Popis: | A polymer composite with high dielectric permittivity and low dielectric loss was successfully fabricated by embedding core–shell structure whisker in polymer matrix. The novel core–shell structure of silicon carbide/silicon dioxide whisker (SiC/SiO2-W) filler was prepared via a one-step air-exposure calcination treatment of original SiC whisker (SiC-W). The effects of semiconductor-insulator core–shell filler on morphology structure, mechanical properties, dielectric and electrical properties of poly(vinylidene fluoride) (PVDF) composite were investigated. Compared with SiC-W/PVDF composite, SiC/SiO2-W/PVDF composite shows stronger mechanical properties, and dramatically suppressed dielectric loss and conductivity while remains high dielectric permittivity. Furthermore, the dielectric and electrical properties of the composite can be further optimized by adjusting the shell thickness. Especially, the composite with SiO2 thickness of 6–7 nm presents the best integrative dielectric and electrical properties, which exhibits a dielectric permittivity of 2230.3 and a dielectric loss of 0.86 at 100 Hz. Keywords: Polymer composites, Semiconductors, Insulator shell, High dielectric permittivity |
| Databáze: | OpenAIRE |
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