Optoelectronic properties of ZnO thin films grown by radio frequency magnetron sputtering
| Autor: | Mohamed Abdou Djouadi, Saâd Rahmane |
|---|---|
| Přispěvatelé: | Université Mohamed Khider de Biskra (BISKRA), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Transmission electron microscopy Electrical resistivity and conductivity 0103 physical sciences Transmittance [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Crystallite Electrical and Electronic Engineering Thin film High-resolution transmission electron microscopy business ComputingMilieux_MISCELLANEOUS Wurtzite crystal structure |
| Zdroj: | Journal of Materials Science: Materials in Electronics Journal of Materials Science: Materials in Electronics, Springer Verlag, 2020, ⟨10.1007/s10854-020-04340-4⟩ |
| ISSN: | 0957-4522 1573-482X |
| Popis: | In the present work, Zinc oxide (ZnO) thin films with suitable optoelectronic properties required for application as transparent electrodes have been grown successfully on glass and silicon substrates by radio frequency magnetron sputtering technique at room temperature. A systematic study of the effect of film thickness on optical, electrical, and structural properties of the films was carried out by spectrophotometer, four-point probe, X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). It is observed that the film growth rate increases with increasing film thickness. The obtained ZnO films not only have an average transmittance greater than 90% in the visible region but also have low resistivity (ρ = 4 × 10− 2 Ω cm). All the deposited films are polycrystalline with a wurtzite structure and highly textured along the c-axis perpendicular to the substrate surface. As the film thickness increases, the intrinsic compressive stress decreases. |
| Databáze: | OpenAIRE |
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