Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results

Autor:	Jiang Huang, Moon J. Kim, Elisabeth Marley Koontz, J.W. Weijtmans, R.B. Irwin, Yuguo Wang, P.J. Jones, P.R. Chidambaram, S. Tang, Rick L. Wise
Rok vydání:	2006
Předmět:	Materials science CMOS Electron diffraction business.industry Transmission electron microscopy Cathode ray Optoelectronics Nanotechnology business Image resolution Nanoscopic scale Focused ion beam PMOS logic
Zdroj:	ECS Transactions. 2:541-547
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2195689
Popis:	The experimental methodology to characterize the nanoscale local lattice strain in advanced Si CMOS devices by using Focused Ion Beam (FIB) system and Convergent Beam Electron Diffraction (CBED) is discussed. Through both high spatial resolution of Transmission Electron Microscopy (TEM) and high strain sensitivity of the CBED technique, compressive lattice strains in the order of 0.001 from the nanoscale Si PMOS channel region are detected. The one-dimensional quantitative strain-mapping is performed by obtaining and simulating high quality CBED patterns with different zone axes such as and .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e918ad1d89dd0a1f40ebd7e061487b71 https://doi.org/10.1149/1.2195689 Zobrazit plný text záznamu