Lead-Free Antimony-Based Light-Emitting Diodes through the Vapor–Anion-Exchange Method
| Autor: | Nan Chieh Chiu, Anupriya Singh, Karunakara Moorthy Boopathi, Anisha Mohapatra, Yang-Fang Chen, Chih-Wei Chu, Gang Li, Tzung-Fang Guo, Yu-Jung Lu |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry chemistry.chemical_element 02 engineering and technology Electroluminescence 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Antimony chemistry PEDOT:PSS law Optoelectronics General Materials Science 0210 nano-technology business Solution process Perovskite (structure) Diode Common emitter Light-emitting diode |
| Zdroj: | ACS Applied Materials & Interfaces. 11:35088-35094 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b10602 |
| Popis: | Hybrid lead halide perovskites continue to attract interest for use in optoelectronic devices such as solar cells and light-emitting diodes. Although challenging, the replacement of toxic lead in these systems is an active field of research. Recently, the use of trivalent metal cations (Bi3+ and Sb3+) that form defect perovskites A3B2X9 has received great attention for the development of solar cells, but their light-emissive properties have not previously been studied. Herein, an all-inorganic antimony-based two-dimensional perovskite, Cs3Sb2I9, was synthesized using the solution process. Vapor-anion-exchange method was employed to change the structural composition from Cs3Sb2I9 to Cs3Sb2Br9 or Cs3Sb2Cl9 by treating CsI/SbI3 spin-coated films with SbBr3 or SbCl3, respectively. This novel method facilitates the fabrication of Cs3Sb2Br9 or Cs3Sb2Cl9 through solution processing without the need of using poorly soluble precursors (e.g., CsCl and CsBr). We go on to demonstrate electroluminescence from a device employing Cs3Sb2I9 emitter sandwiched between ITO/PEDOT:PSS and TPBi/LiF/Al as the hole and electron injection electrodes, respectively. A visible-infrared radiance of 0.012 W·Sr-1·m-2 was measured at 6 V when Cs3Sb2I9 was the active emitter layer. These proof-of-principle devices suggest a viable path toward low-dimensional, lead-free A3B2X9 perovskite optoelectronics. |
| Databáze: | OpenAIRE |
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