Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots

Autor:	Hayes, Robert R., Kiselev, Andrey A., Borselli, Matthew G., Bui, Steven S., Croke, Edward T., Deelman, Peter W., Maune, Brett M., Milosavljevic, Ivan, Moon, Jeong-Sun, Ross, Richard S., Schmitz, Adele E., Gyure, Mark F., Hunter, Andrew T.
Jazyk:	angličtina
Rok vydání:	2009
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Mesoscale and Nanoscale Physics (cond-mat.mes-hall) FOS: Physical sciences Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Popis:	We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than those for InGaAs dots for comparable magnetic field strengths, but both approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for InGaAs). 5 pages, 5 figures
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8d0ae75fd85fce1dfcad1d0a1fca420 http://arxiv.org/abs/0908.0173 Zobrazit plný text záznamu