Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties
| Autor: | A. Joseph, Tobias Wietler, H. J. Osten, G. Lilienkamp |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
leakage current
Materials science Silicon Silicon dioxide Annealing (metallurgy) Dewey Decimal Classification::600 | Technik::670 | Industrielle und handwerkliche Fertigung Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology 01 natural sciences chemistry.chemical_compound ddc:670 Sputtering 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 010302 applied physics Auger electron spectroscopy epitaxial growth 021001 nanoscience & nanotechnology Condensed Matter Physics Nitrogen Dewey Decimal Classification::600 | Technik Electronic Optical and Magnetic Materials Ion implantation chemistry oxynitrides nitrogen concentration 0210 nano-technology ddc:600 |
| Zdroj: | Journal of Electronic Materials (JEM) 49 (2020), Nr. 11 |
| DOI: | 10.15488/10712 |
| Popis: | The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering the implantation dose. The presence of nitrogen incorporation on the Gd2O3 layer was studied using Auger electron spectroscopy. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in Gd2O3. A maximum concentration of 11% was obtained for nitrogen in the interface between the silicon dioxide and Gd2O3 layer and the implanted areas of the Gd2O3 oxide layer after sputter depth profiling. The nitrogen distribution in the layer was found to be non-uniform. Nitrogen incorporation sharply reduced the leakage current and effectively suppressed the hysteresis. Leakage current was two orders lower compared with the pure Gd2O3. |
| Databáze: | OpenAIRE |
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