A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity
Autor: | Giovanni Bruno, Maria Losurdo, W. Alan Doolittle, April S. Brown, MariaMichela Giangregorio, Pio Capezzuto, Gon Namkoong |
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Rok vydání: | 2002 |
Předmět: | |
Zdroj: | Scopus-Elsevier |
ISSN: | 1946-4274 0272-9172 |
DOI: | 10.1557/proc-722-k3.4 |
Popis: | The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked. |
Databáze: | OpenAIRE |
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