A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

Autor: Giovanni Bruno, Maria Losurdo, W. Alan Doolittle, April S. Brown, MariaMichela Giangregorio, Pio Capezzuto, Gon Namkoong
Rok vydání: 2002
Předmět:
Zdroj: Scopus-Elsevier
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-722-k3.4
Popis: The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.
Databáze: OpenAIRE