Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
| Autor: | Rainer Waser, Gustav Bihlmayer, Krzysztof Szot, Wolfgang Speier |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Bistability Surface Properties Nanowire Oxide Nanotechnology Microscopy Atomic Force Smart material Condensed Matter::Materials Science chemistry.chemical_compound Electromagnetic Fields Electrical resistance and conductance Electrical resistivity and conductivity Aluminum Oxide Electric Impedance General Materials Science Titanium business.industry Mechanical Engineering Electric Conductivity Temperature Oxides General Chemistry Condensed Matter Physics Oxygen chemistry Metals Strontium Mechanics of Materials Optoelectronics Condensed Matter::Strongly Correlated Electrons Nanometre Terabit Electronics Crystallization business |
| Zdroj: | Nature Materials. 5:312-320 |
| ISSN: | 1476-4660 1476-1122 |
| DOI: | 10.1038/nmat1614 |
| Popis: | The great variability in the electrical properties of multinary oxide materials, ranging from insulating, through semiconducting to metallic behaviour, has given rise to the idea of modulating the electronic properties on a nanometre scale for high-density electronic memory devices. A particularly promising aspect seems to be the ability of perovskites to provide bistable switching of the conductance between non-metallic and metallic behaviour by the application of an appropriate electric field. Here we demonstrate that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO(3). The phenomenon is shown to originate from local modulations of the oxygen content and to be related to the self-doping capability of the early transition metal oxides. Our results show that extended defects, such as dislocations, can act as bistable nanowires and hold technological promise for terabit memory devices. |
| Databáze: | OpenAIRE |
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