AlN grown by CBE for power device applications
| Autor: | Adrien Cutivet, Abderrahim Rahim Boucherif, Meriem Bouchilaoun, Boussairi Bouzazi, Richard Arès, Hubert Pelletier, Hassan Maher, Christophe Rodriguez, Tom MacElwee, Philippe-Olivier Provost, Guillaume Gommé |
|---|---|
| Přispěvatelé: | Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), GaN Systems |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Chemical beam epitaxy [SPI]Engineering Sciences [physics] Ammonia chemistry.chemical_compound Thermal conductivity chemistry Aluminium 0103 physical sciences Growth rate 0210 nano-technology lcsh:Physics ComputingMilieux_MISCELLANEOUS |
| Zdroj: | AIP Advances AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (6), pp.065123. ⟨10.1063/1.5142615⟩ AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020) |
| ISSN: | 2158-3226 |
| DOI: | 10.1063/1.5142615 |
| Popis: | Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, respectively, at a growth temperature below 600 °C. The thermal conductivity and breakdown field of 10 µm thick AlN epilayers were measured to be 57 W/(m.K) and 1.04 106 V/cm, respectively. These results demonstrate the potential of CBE as an alternative growth method for the development of thick AlN layers in high power device applications. |
| Databáze: | OpenAIRE |
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